Personel

Doç.Dr. PINAR DOĞAN
Doç.Dr.
Pınar Doğan
@ E-posta
pinardogan@mu.edu.tr
Telefon
0252 211 1684 , 0252 211 5543

Kadro Bilgileri

Görev Birimi

Fen Bilimleri Enstitüsü

Kadro Birimi

Mühendislik Fakültesi / Elektrik Elektronik Mühendisliği Bölümü / Elektronik Anabilim Dalı

Öğrenim Bilgileri

Lisans

İzmir Yüksek Teknoloji Enstitüsü Fen Fakültesi Fizik 14.06.2002

Yüksek Lisans

İzmir Yüksek Teknoloji Enstitüsü Fen Fakültesi Fizik 01.09.2005

Doktora

Berlin Teknik Üniversitesi Elektrik ve Bilgisayar Mühendisliği Fizik 07.12.2011

Yayin Bilgileri

(A-1) SCI veya SCI Expanded, SSCI, AHCI tarafından taranan dergilerde yayımlanan tam makale

1-) Jahn, U., Musolino, M., Laehnemann, J., Doğan, P., Fernandez Garrido, S., Wang, J., Xu, K., Cai, D., Bian, L., Gong, X., Yang, H., 2016. The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures. Semiconductor Science and Technology
2-) Kaganer, V.M., Fernandez Garrido, S., Doğan, P., Sabelfeld, K., Brandt, O., 2016. Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence. NanoLetters
3-) Pfüller, C., Corfdir, P., Hauswald, C., Flissikowski, T., Kong, X., Zettler, J.K., Fernandez, S., Doğan, P., Grahn, H.T., Trampert, A., Geelhaar, L., Brandt, O., 2016. Nature of excitons bound to inversion domain boundaries Origin of the 3 45 eV luminescence lines in spontaneously formed GaN nanowires on Si 111. Physical Review B
4-) Laehnemann, J., Jahn, U., Brandt, O., Flissikowski, T., Doğan, P., Grahn, H.T., 2014. Luminescence associated with stacking faults in GaN . Journal of Physics D: Applied Physics
5-) Gong, X., Dogan, P., Zhang, X., Jahn, U., Xu, K., Bian, L., Yang, H., 2014. Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations . Japanese Journal of Applied Physics
6-) Sabelfeld, K.K., Kaganer, V.M., Limbach, F., Doğan, P., Brandt, O., Geelhaar, L., Riechert, H., 2013. Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder . Applied Physics Letters
7-) Kaganer, V.M., Jenichen, B., Brandt, O., Fernandez, S., Doğan, P., Geelhaar, L., Riechert, H., 2012. Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles. Physical Review B
8-) Laehnemann, J., Brandt, O., Jahn, U., Pfueller, C., Roder, C., Doğan, P., Grosse, F., Belabbes, A., Bechstedt, F., Trampert, A., Geelhaar, L., 2012. Direct experimental determination of the spontaneous polarization of GaN . Physical Review B
9-) Doğan, P., Brandt, O., Pfüller, C., Lähnemann, J., Jahn, U., Roder, C., Trampert, A., Geelhaar, L., Riechert, H., 2011. Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy . Crystal Growth and Design
10-) Jenichen, B., Brandt, O., Pfüller, C., Doğan, P., Knelangen, M., Trampert, A., 2011. Macro- and micro-strain in GaN nanowires on Si(111) . Nanotechnology
11-) Gao, C.X., Farshchi, R., Roder, C., Dogan, P., Brandt, O., 2011. GaN/Fe core/shell nanowires for nonvolatile spintronics on Si . Physical Review B
12-) Doğan, P., Brandt, O., Pfüller, C., K., A., Geelhaar, L., Riechert, H., 2011. GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy . Journal of Crystal Growth
13-) Gorka, B., Rau, B., Doğan, P., Becker, C., Ruske, F., Gall, S., Rech, B., 2009. Influence of hydrogen plasma on the defect passivation of polycrystalline Si thin film solar cells. Plasma Processes and Polymers
14-) Becker, C., Conrad, E., Doğan, P., Fenske, F., Gorka, B., Hänel, T., Lee, K.Y., Rau, B., Ruske, F., Weber, T., Berginski, M., Hüpkes, J., Gall, S., Rech, B., 2009. Solid Phase Crystallization Of Amorphous Silicon On ZnO:Al For Thin Film Solar Cells . Solar Energy Materials and Solar Cells
15-) Gall, S., Becker, C., Conrad, E., Doğan, P., Fenske, F., Gorka, B., Lee, K., Rau, B., Ruske, F., Rech, B., 2009. Polycrystalline Silicon Thin-Film Solar Cells On Glass . Solar Energy Materials and Solar Cells
16-) Van Gestel, D., Dogan, P., Gordon, I., Bender, H., Lee, K.Y., Beaucarne, G., Gall, S., Poortmans, J., 2009. Investigation of intragrain defects in pc-Si layers obtained by aluminum-induced crystallization: comparison of layers made by low and high temperature epitaxy. Materials Science and Engineering B- Advanced Functional Solid-State Materials
17-) Rau, B., Weber, T., Gorka, B., Dogan, P., Fenske, F., Lee, K., Gall, S., Rech, B., 2009. Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass. Materials Science and Engineering B- Advanced Functional Solid-State Materials
18-) Dogan, P., Rudigier, E., Fenske, F., Lee, K., Gorka, B., Rau, B., Conrad, E., Gall, S., 2008. Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation. Thin Solid Films
19-) Gorka, B., Dogan, P., Sieber, I., Fenske, F., Gall, S., 2007. Low-temperature epitaxy of silicon by electron beam evaporation. Thin Solid Films
20-) Ozdag, P., Atanassova, E., Gunes, M., 2005. “The effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitors”. Journal of Optoelectronics and Advanced Materials

(B-1) Uluslararası kongre, sempozyum, panel, çalıştay gibi bilimsel, sanatsal toplantılarda sözlü olarak sunulan ve tam metin olarak yayımlanan bildiri

1-) Dogan P., Brandt O., Hauswald C., Calarco R., Trampert A., Geelhaar L., Riechert H., 2012. Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy. SPIE Photonics West OPTO 2012
2-) Dogan P., Brandt O., Pfueller C., Laehnemann J., Jahn U., Roder C., Trampert A., Geelhaar L., Riechert H., 2011. Pendeoepitaxial overgrowth and coalescence of GaN nanowires on Si by plasma assisted molecular beam epitaxy. Sino-German Workshop 2011
3-) Dogan P., Brandt O., Pfueller C., Roder C., Laehnemann J., Bluhm A. K., Trampert A., Geelhaar L., Riechert H., 2010. Pendeoepitaxial overgrowth and coalescence of GaN nanowires on Si 111 by molecular beam epitaxy. Sino-German Workshop 2010
4-) P. Dogan, O. Brandt, C. Pfueller, C. Roder, J. Laehnemann, A. K. Bluhm, A. Trampert, L. Geelhaar and H. Riechert, “Pendeoepitaxial overgrowth and coalescence of GaN nanowires on Si(111) by molecular beam epitaxy” Sino-German Workshop, Berlin, Germany - 2010
5-) Sontheimer, T., Doğan, P., Becker, C., Gall, S., Rech, B., Schubert, U., Young, T., Partlin, S., Keevers, M., Egan, R., 2009. 6.7% Efficient Poly-Si Thin Film Mini-Modules by High-Rate Electron-Beam Evaporation. Proceedings of the 24th European Photovoltaic Solar Energy Conference
6-) Egan, R., Keevers, M., Schubert, U., Young, T., Evans, R., Partlin, S., Wolf, M., Schneider, J., Hogg, D., Eggleston, B., Green, M., Falk, F., Gawlik, A., Andrä, G., Werner, M., Hagendorf, C., Doğan, P., Sontheimer, T., Gall, S., 2009. CSG Minimodules Using Electron-Beam Evaporated Silicon. Proceedings of the 24th European Photovoltaic Solar Energy Conference
7-) Egan R, Keevers M, Schubert U, Young T, Evans R, Partlin S, Wolf M, Schneider J, Hogg D, Eggleston B, Green M, Falk F, Gawlik A, Andrä G, Werner M, Hagendorf C, Doğan Pınar, Sontheimer T, Gall S, 2009. CSG Minimodules Using Electron Beam Evaporated Silicon. 24th European Photovoltaic Solar Energy Conference
8-) Sontheimer T, Doğan Pınar, Becker C, Gall S, Rech B, Schubert U, Young T, Partlin S, Keevers M, Egan Rj, 2009. 6.7% Efficient Poly Si Thin Film Mini Modules by High Rate Electron Beam Evaporation. 24th European Photovoltaic Solar Energy Conference
9-) Lee K. Y., Dogan P., Ruske F., Gorka B., Gall S., Rech B., 2008. The properties of Poly Si films grown on Zno Al coated borofloat glass by aluminum induced layer exchange ALILE process. 23rd European Photovoltaic Solar Energy Conference
10-) Becker C., Dogan P., Ruske F., Gorka B., Sánchez-vicens A., Conrad E., Gall S., Rech B., 2008. Solid phase crystallized silicon thin film solar cells on temperature stable ZnO Al contact layers. 23rd European Photovoltaic Solar Energy Conference
11-) Dogan P., Fenske F., Lee K.y., Gorka B., Gall S., Rech B., 2008. Low Temperature Epitaxy of Si by E Beam Evaporation for Polycrystalline Si Thin Film Solar Cells. NANOMAT 2008
12-) P. Dogan, F. Fenske, K.Y. Lee, B. Gorka, S. Gall, B. Rech, “Low Temperature Epitaxy of Si by E-Beam Evaporation for Polycrystalline Si Thin Film Solar Cells”, Abstract book of NANOMAT 2008, METU, Ankara, Turkey, 25 - 2008
13-) C. Becker, P. Dogan, F. Ruske, B. Gorka, A. Sánchez-Vicens, E. Conrad, S. Gall and B. Rech, “Solid phase crystallized silicon thin-film solar cells on temperature-stable ZnO:Al contact layers”, Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 2045-2048 - 2008
14-) K. Y. Lee, P. Dogan, F. Ruske, B. Gorka, S. Gall, and B. Rech, “The properties of Poly-Si films grown on Zno:Al coated borofloat glass by aluminum-induced layer exchange (ALILE) process”, Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 2261-2264 - 2008
15-) P. Dogan, F. Fenske, L.-P. Scheller, K. Y. Lee, B. Gorka, B. Rau, E. Conrad, S. Gall, B. Rech, “Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation”, Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2019-2023 - 2007
16-) S. Gall, K.Y. Lee, P. Dogan, B. Gorka, C. Becker, F. Fenske, B. Rau, E. Conrad, B. Rech, “Large-Grained Polycrystalline Silicon Thin-Film Solar Cells On Glass”, Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2005-2009 - 2007
17-) B. Rau, K.Y. Lee, P. Dogan, F. Fenske, E. Conrad, S. Gall, “Improvement Of Epitaxially Grown Poly-Si Thin-Film Solar Cells On Glass By Rapid Thermal Annealing”, Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2010-2014 - 2007
18-) B. Gorka, B. Rau, K.Y. Lee, P. Dogan, F. Fenske, E. Conrad, S.Gall, B. Rech, “Hydrogen Passivation Of Polycrystalline Si Thin Films By Plasma Treatment” Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 2024-2027 - 2007
19-) I. Gordon, D. Van Gestel, L. Carnel, G. Beaucarne, J. Poortmans, K.Y. Lee, P. Dogan, B. Gorka, C. Becker, F. Fenske, B. Rau, S. Gall, B. Rech, J. Plentz, F. Falk, D. Le Bellac, “Advanced Concepts For Thin-Film Polycrystalline-Silicon Solar Cells”, Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy, 1890-1894 - 2007
20-) C. Becker, E. Conrad, P. Dogan, F. Fenske, B. Gorka, T. Hänel, K. Y. Lee, B. Rau, F. Ruske, T. Weber, M. Berginski, J. Hüpkes, S. Gall and B. Rech, “Solid Phase Crystallization Of Amorphous Silicon On ZnO:Al For Thin Film Solar Cells”, Technical Digest of the 17th International Photovoltaic Science and Engineering Conference, Fukuoka, Japan, 1122-1123 - 2007
21-) S. Gall, C. Becker, E. Conrad, P. Dogan, F. Fenske, B. Gorka, K.Y. Lee, B. Rau, F. Ruske, B. Rech, “Polycrystalline Silicon Thin-Film Solar Cells On Glass”, Technical Digest of the 17th International Photovoltaic Science and Engineering Conference, Fukuoka, Japan, 343-344 - 2007
22-) Rau B., Lee K.y., Dogan P., Fenske F., Conrad E., Gall S., 2007. Improvement Of Epitaxially Grown Poly Si Thin Film Solar Cells On Glass By Rapid Thermal Annealing. 22nd European Photovoltaic Solar Energy Conference
23-) Gordon I., Van Gestel D., Carnel L., Beaucarne G., Poortmans J., Lee K.y., Dogan P., Gorka B., Becker C., Fenske F., Rau B., Gall S., Rech B., Plentz J., Falk F., Le Bellac D., 2007. Advanced Concepts For Thin Film Polycrystalline Silicon Solar Cells. 22nd European Photovoltaic Solar Energy Conference
24-) Gorka B., Rau B., Lee K.y., Dogan P., Fenske F., Conrad E., Gall S., Rech B., 2007. Hydrogen Passivation Of Polycrystalline Si Thin Films By Plasma Treatment. 22nd European Photovoltaic Solar Energy Conference
25-) Gall S., Lee K.y., Dogan P., Gorka B., Becker C., Fenske F., Rau B., Conrad E., Rech B., 2007. Large Grained Polycrystalline Silicon Thin Film Solar Cells On Glass. 22nd European Photovoltaic Solar Energy Conference
26-) Dogan P., Fenske F., Scheller L.-p., Lee K. Y., Gorka B., Rau B., Conrad E., Gall S., Rech B., 2007. Structural and electrical properties of epitaxial Si layers prepared by E beam evaporation. 22nd European Photovoltaic Solar Energy Conference
27-) P. Dogan, B. Gorka, L. Scheller, I. Sieber, F. Fenske, S. Gall, “Low-temperature epitaxy of silicon by using electron beam evaporation”, Proceedings of the 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 1060-1063 - 2006
28-) S. Gall, J. Berghold, E. Conrad, P. Dogan, F. Fenske, B. Gorka, K. Lips, M. Muske, K. Petter, B. Rau, J. Schneider, I. Sieber, “Large-Grained Polycrsytalline Silicon On Glass For Thin-Film Solar Cells”, Proceedings of the 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 1091-1094 - 2006

(B-2) Uluslararası kongre, sempozyum, panel, çalıştay gibi bilimsel, sanatsal toplantılarda sözlü olarak sunulan ve özet metin olarak yayımlanan bildiri.

1-) Kaganer Vladimir, Fernandezgarrido Sergio, Doğan Pınar, Sabelfeld Karl, Brandt Oliver, 2015. Coalescence of spontaneously formed GaN nanowires in plasma assisted molecular beam epitaxy. Nanowires Growth Workshop 2015
2-) Dogan P., Brandt O., Geelhaar L., Riechert H., 2011. Evolution of the GaN nanowire orientation distribution monitored in situ by reflection high energy electron diffraction. Paul Drude Institute Annual Report 2011
3-) Jenichen B., Brandt O., Dogan P., Pfueller C., Knelangen M., Trampert A., 2011. Orientation distribution and residual strain of GaN nanowires. Paul Drude Institute Annual Report 2011
4-) Laehnemann J., Jahn U., Brandt O., Roder C., Dogan P., Trampert A., Geelhaar L., Riechert H., 2010. Cathodoluminescence imaging and spectroscopy of stacking faults in laterally overgrown GaN nanowires. Paul Drude Institute Annual Report 2010
5-) Dogan P., Brandt O., Pfüller C., Roder C., Lähnemann J., Trampert A., Geelhaar L., Riechert H., 2010. Pendeoepitaxial overgrowth and coalescence of GaN nanowires on Si 111 by molecular beam epitaxy. Paul Drude Institute Annual Report 2010
6-) P. Dogan, O. Brandt, C. Pfüller, C. Roder, J. Lähnemann, A. Trampert, L. Geelhaar, H. Riechert, “Pendeoepitaxial overgrowth and coalescence of GaN nanowires on Si(111) by molecular beam epitaxy”, PDI Annual Report - 2010
7-) J. Lähnemann, U. Jahn, O. Brandt, C. Roder, P. Dogan, A. Trampert, L. Geelhaar, H. Riechert, “Cathodoluminescence imaging and spectroscopy of stacking faults in laterally overgrown GaN nanowires”, PDI Annual Report - 2010

(B-3) Uluslararası kongre, sempozyum, panel, çalıştay gibi bilimsel, sanatsal toplantılarda poster şeklinde sunulan ve özet metin olarak yayımlanan bildiri.

1-) Kasapoğlu Ahmet Emre, Koçak Yusuf, Gür Emre, Doğan Pınar, 2017. MBE grown GaN Nanowires on Si (111) Substrate Temperature Dependence. NanoTr-13
2-) Dogan P., Brandt O., Geelhaar L., Riechert H., 2011. Reflection High Energy Electron Diffraction Phi Scans for the In situ Monitoring of the Growth of GaN Nanowires on Si. 16th Euro-MBE Workshop
3-) Doğan, P., Brandt, O., Geelhaar, L., Riechert, H., 2011. Reflection High Energy Electron Diffraction Phi Scans for the In-situ Monitoring of the Growth of GaN Nanowires on Si. European Project Meeting (SINOPLE) and Workshop on III-Nitrides-Growth, Characterization and Simulation
4-) B. Jenichen, O. Brandt, P. Dogan, C. Pfueller, M. Knelangen, A. Trampert, “Orientation distribution and residual strain of GaN nanowires”, PDI Annual Report - 2011
5-) P. Dogan, O. Brandt, L. Geelhaar, H. Riechert, “Evolution of the GaN nanowire orientation distribution monitored in-situ by reflection high-energy electron diffraction”, PDI Annual Report - 2011
6-) J. Lähnemann, U. Jahn, O. Brandt, C. Roder, P. Dogan, A. Trampert, L. Geelhaar, H. Riechert, “Cathodoluminescence imaging and spectroscopy of stacking faults in laterally overgrown GaN nanowires”, PDI Annual Report - 2010
7-) P. Dogan, O. Brandt, C. Pfüller, C. Roder, J. Lähnemann, A. Trampert, L. Geelhaar, H. Riechert, “Pendeoepitaxial overgrowth and coalescence of GaN nanowires on Si(111) by molecular beam epitaxy”, PDI Annual Report - 2010
8-) P. Ozdag, E. Atanassova, M. Gunes, “Electronic Properties of Tantalum Pentoxide Insulating Layers in MOS Capacitors”, 13th International School on Condensed Matter Physics- Physics and Technology of Solid State and Soft Condensed Matter, 30 August-03 September 2004, Varna, Bulgaria - 2004

(B-4) Ulusal kongre, sempozyum, panel, çalıştay gibi bilimsel, sanatsal toplantılarda sözlü olarak sunulan ve tam metin olarak yayımlanan bildiri

1-) Dogan Pinar, Brandt Oliver, Calarco Raffaella, Geelhaar Lutz, Riechert Henning, 2014. Growth of GaN Nanowires by Molecular Beam Epitaxy for LED Applications. Yogun Madde Fizigi Izmir Toplantisi 2014

(C-3) Alanında tanınmış uluslararası yayınevlerince yayımlanan kitaplarda bölüm yazarlığı

1-) Doğan, P., Chèze, C., Calarco, R., 2015. Semiconductor nanowires Materials, synthesis, characterization and applications. Yayın Evi: Woodhead Publishing Editör Adı: Jordi Arbiol, Qihua Xiong and Laura Pugh

(D-10) SCI veya SCI-Expanded, SSCI ve AHCI tarafından taranan dergilerde hakemlik

1-) Physica Status Solidi C: Current Topics in Solid State Physics. 2015. Hakemlik Sayısı: 2
2-) Journal of Physics D. 2015. Hakemlik Sayısı: 1
3-) ACS Applied Materials & Interfaces. 2015. Hakemlik Sayısı: 1
4-) Turkish Journal of Electrical Engineering and Computer Sciences. 2015. Hakemlik Sayısı: 1
5-) Electrochemical and Solid State Letters - 2011
6-) Electrochemical and Solid State Letters - 2010
7-) Electrochemical and Solid State Letters - 2009

(D-5) SCI veya SCI-Expanded, SSCI ve AHCI tarafında taranan dergilerde yardımcı editörlük/ alan editörlüğü ya da yayın kurulu üyeliği.

1-) Editörlük Türü: Dergi. 2019. Mugla Journal of Science and Technology.
2-) Editörlük Türü: Dergi. 2018. Türkish Journal of Electrical Engineering and Computer Sciences.

(E-1) SCI veya SCI-Expanded, SSCI ve AHCI tarafından taranan dergilerde olmak üzere adayın yazar olarak yer almadığı SCI veya SCI-Expanded, SSCI ve AHCI tarafından taranan yayınlarda adayın eserlerine yapılan atıf.

1-) Luminescence associated with stacking faults in GaN - Atıf Yılı: 2017 Atıf Sayısı: 12
2-) Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations - Atıf Yılı: 2017 Atıf Sayısı: 1
3-) Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder - Atıf Yılı: 2017 Atıf Sayısı: 4
4-) Direct experimental determination of the spontaneous polarization of GaN - Atıf Yılı: 2017 Atıf Sayısı: 3
5-) Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy - Atıf Yılı: 2017 Atıf Sayısı: 1
6-) Macro- and micro-strain in GaN nanowires on Si(111) - Atıf Yılı: 2017 Atıf Sayısı: 4
7-) GaN/Fe core/shell nanowires for nonvolatile spintronics on Si - Atıf Yılı: 2017 Atıf Sayısı: 1
8-) Influence of hydrogen plasma on the defect passivation of polycrystalline Si thin film solar cells - Atıf Yılı: 2017 Atıf Sayısı: 3
9-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2017 Atıf Sayısı: 1
10-) Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence - Atıf Yılı: 2017 Atıf Sayısı: 5
11-) Nature of excitons bound to inversion domain boundaries Origin of the 3 45 eV luminescence lines in spontaneously formed GaN nanowires on Si 111 - Atıf Yılı: 2017 Atıf Sayısı: 2
12-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2016 Atıf Sayısı: 3
13-) Influence of hydrogen plasma on the defect passivation of polycrystalline Si thin film solar cells - Atıf Yılı: 2016 Atıf Sayısı: 1
14-) Macro- and micro-strain in GaN nanowires on Si(111) - Atıf Yılı: 2016 Atıf Sayısı: 4
15-) Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy - Atıf Yılı: 2016 Atıf Sayısı: 3
16-) Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder - Atıf Yılı: 2016 Atıf Sayısı: 2
17-) Direct experimental determination of the spontaneous polarization of GaN - Atıf Yılı: 2016 Atıf Sayısı: 11
18-) Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles - Atıf Yılı: 2016 Atıf Sayısı: 1
19-) Luminescence associated with stacking faults in GaN - Atıf Yılı: 2016 Atıf Sayısı: 8
20-) Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder - Atıf Yılı: 2015 Atıf Sayısı: 5
21-) Luminescence associated with stacking faults in GaN - Atıf Yılı: 2015 Atıf Sayısı: 5
22-) Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles - Atıf Yılı: 2015 Atıf Sayısı: 3
23-) Direct experimental determination of the spontaneous polarization of GaN - Atıf Yılı: 2015 Atıf Sayısı: 10
24-) Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy - Atıf Yılı: 2015 Atıf Sayısı: 2
25-) Macro- and micro-strain in GaN nanowires on Si(111) - Atıf Yılı: 2015 Atıf Sayısı: 6
26-) GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy - Atıf Yılı: 2015 Atıf Sayısı: 2
27-) Solid Phase Crystallization Of Amorphous Silicon On ZnO:Al For Thin Film Solar Cells - Atıf Yılı: 2015 Atıf Sayısı: 1
28-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2015 Atıf Sayısı: 3
29-) 6.7% Efficient Poly-Si Thin Film Mini-Modules by High-Rate Electron-Beam Evaporation - Atıf Yılı: 2015 Atıf Sayısı: 1
30-) CSG Minimodules Using Electron-Beam Evaporated Silicon - Atıf Yılı: 2015 Atıf Sayısı: 1
31-) Low-temperature epitaxy of silicon by electron beam evaporation - Atıf Yılı: 2014 Atıf Sayısı: 1
32-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2014 Atıf Sayısı: 6
33-) Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass - Atıf Yılı: 2014 Atıf Sayısı: 4
34-) Influence of hydrogen plasma on the defect passivation of polycrystalline Si thin film solar cells - Atıf Yılı: 2014 Atıf Sayısı: 4
35-) Solid Phase Crystallization Of Amorphous Silicon On ZnO:Al For Thin Film Solar Cells - Atıf Yılı: 2014 Atıf Sayısı: 5
36-) GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy - Atıf Yılı: 2014 Atıf Sayısı: 3
37-) Macro- and micro-strain in GaN nanowires on Si(111) - Atıf Yılı: 2014 Atıf Sayısı: 11
38-) GaN/Fe core/shell nanowires for nonvolatile spintronics on Si - Atıf Yılı: 2014 Atıf Sayısı: 1
39-) Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy - Atıf Yılı: 2014 Atıf Sayısı: 8
40-) Direct experimental determination of the spontaneous polarization of GaN - Atıf Yılı: 2014 Atıf Sayısı: 17
41-) Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles - Atıf Yılı: 2014 Atıf Sayısı: 5
42-) Luminescence associated with stacking faults in GaN - Atıf Yılı: 2014 Atıf Sayısı: 1
43-) Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder - Atıf Yılı: 2014 Atıf Sayısı: 1
44-) Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder - Atıf Yılı: 2013 Atıf Sayısı: 1
45-) Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles - Atıf Yılı: 2013 Atıf Sayısı: 3
46-) Direct experimental determination of the spontaneous polarization of GaN - Atıf Yılı: 2013 Atıf Sayısı: 11
47-) Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy - Atıf Yılı: 2013 Atıf Sayısı: 2
48-) GaN/Fe core/shell nanowires for nonvolatile spintronics on Si - Atıf Yılı: 2013 Atıf Sayısı: 1
49-) Macro- and micro-strain in GaN nanowires on Si(111) - Atıf Yılı: 2013 Atıf Sayısı: 6
50-) GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy - Atıf Yılı: 2013 Atıf Sayısı: 2
51-) Influence of hydrogen plasma on the defect passivation of polycrystalline Si thin film solar cells - Atıf Yılı: 2013 Atıf Sayısı: 4
52-) Solid Phase Crystallization Of Amorphous Silicon On ZnO:Al For Thin Film Solar Cells - Atıf Yılı: 2013 Atıf Sayısı: 6
53-) Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass - Atıf Yılı: 2013 Atıf Sayısı: 9
54-) Investigation of intragrain defects in pc-Si layers obtained by aluminum-induced crystallization: comparison of layers made by low and high temperature epitaxy - Atıf Yılı: 2013 Atıf Sayısı: 2
55-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2013 Atıf Sayısı: 10
56-) Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation - Atıf Yılı: 2013 Atıf Sayısı: 3
57-) Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation - Atıf Yılı: 2012 Atıf Sayısı: 4
58-) Low-temperature epitaxy of silicon by electron beam evaporation - Atıf Yılı: 2012 Atıf Sayısı: 1
59-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2012 Atıf Sayısı: 8
60-) Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass - Atıf Yılı: 2012 Atıf Sayısı: 3
61-) Solid Phase Crystallization Of Amorphous Silicon On ZnO:Al For Thin Film Solar Cells - Atıf Yılı: 2012 Atıf Sayısı: 3
62-) Influence of hydrogen plasma on the defect passivation of polycrystalline Si thin film solar cells - Atıf Yılı: 2012 Atıf Sayısı: 2
63-) GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy - Atıf Yılı: 2012 Atıf Sayısı: 4
64-) GaN/Fe core/shell nanowires for nonvolatile spintronics on Si - Atıf Yılı: 2012 Atıf Sayısı: 3
65-) Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy - Atıf Yılı: 2012 Atıf Sayısı: 3
66-) Macro- and micro-strain in GaN nanowires on Si(111) - Atıf Yılı: 2012 Atıf Sayısı: 2
67-) Macro- and micro-strain in GaN nanowires on Si(111) - Atıf Yılı: 2011 Atıf Sayısı: 1
68-) Solid Phase Crystallization Of Amorphous Silicon On ZnO:Al For Thin Film Solar Cells - Atıf Yılı: 2011 Atıf Sayısı: 4
69-) Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation - Atıf Yılı: 2011 Atıf Sayısı: 3
70-) Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass - Atıf Yılı: 2011 Atıf Sayısı: 1
71-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2011 Atıf Sayısı: 15
72-) Investigation of intragrain defects in pc-Si layers obtained by aluminum-induced crystallization: comparison of layers made by low and high temperature epitaxy - Atıf Yılı: 2011 Atıf Sayısı: 1
73-) Low-temperature epitaxy of silicon by electron beam evaporation - Atıf Yılı: 2011 Atıf Sayısı: 1
74-) Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation - Atıf Yılı: 2010 Atıf Sayısı: 5
75-) Low-temperature epitaxy of silicon by electron beam evaporation - Atıf Yılı: 2010 Atıf Sayısı: 2
76-) Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass - Atıf Yılı: 2010 Atıf Sayısı: 2
77-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2010 Atıf Sayısı: 6
78-) Solid Phase Crystallization Of Amorphous Silicon On ZnO:Al For Thin Film Solar Cells - Atıf Yılı: 2010 Atıf Sayısı: 4
79-) Solid Phase Crystallization Of Amorphous Silicon On ZnO:Al For Thin Film Solar Cells - Atıf Yılı: 2009 Atıf Sayısı: 3
80-) Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass - Atıf Yılı: 2009 Atıf Sayısı: 3
81-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2009 Atıf Sayısı: 4
82-) Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation - Atıf Yılı: 2009 Atıf Sayısı: 5
83-) Low-temperature epitaxy of silicon by electron beam evaporation - Atıf Yılı: 2009 Atıf Sayısı: 2
84-) Low-temperature epitaxy of silicon by electron beam evaporation - Atıf Yılı: 2008 Atıf Sayısı: 1

(E-2) ÜAK Tarafından Kabul edilmiş olan uluslararası alan indeksleri tarafından taranan dergilerde yayınlanan tam makalelerde yapılan atıf

1-) Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder - Atıf Yılı: 2017 Atıf Sayısı: 1
2-) Luminescence associated with stacking faults in GaN - Atıf Yılı: 2015 Atıf Sayısı: 1
3-) Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles - Atıf Yılı: 2015 Atıf Sayısı: 1
4-) Direct experimental determination of the spontaneous polarization of GaN - Atıf Yılı: 2015 Atıf Sayısı: 3
5-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2015 Atıf Sayısı: 1

(E-4) SCI veya SCI-Expanded, SSCI ve AHCI dışındaki uluslararası indekslerde taranan dergilerde adayın yazar olarak yer almadığı yayınlarda, adayın eserlerine yapılan atıf.

1-) Polycrystalline Silicon Thin-Film Solar Cells On Glass - Atıf Yılı: 2017 Atıf Sayısı: 1
2-) Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence - Atıf Yılı: 2017 Atıf Sayısı: 1

(G-2) Uluslar arası kuruluşlarca desteklenen ve tamamlanan projede görev(araştırmacı, eğitmen, danışman, vb. olarak)

1-) Efficient and Cost-Effective InGaN Light Sources on Si substrates for Solid State Lightening - 2009
2-) Advanced Thin Film Technologies for Cost Effective Photovoltaics - 2005

(G-3) TÜBİTAK, TÜBA, KOSGEB (1002 ve 3001 hariç tüm projeler)SBB, Bakanlıklar vb. kamu kurumları veya özel kuruluşlarca desteklenen ve tamamlanan proje yürütücülüğü

1-) Proje Durum: Tamamlandı. Projedeki Görev: Yürütücü. Konu: . Proje Türü: TÜBİTAK PROJESİ. Polikristal Silisyum Ince Film Güneş Gözelerinin Aktif Tabakasının Optoelektronik Özelliklerinin Fotoiletkenlik Yöntemleri ile İncelenmesi. 2015-2018

(G-4-Eski) TÜBİTAK, TÜBA, DPT, KOSGEB, Bakanlıklar vb. kamu kurumları veya özel kuruluşlarca desteklenen ve tamamlanan projede görev(araştırmacı, eğitmen, danışman vb, olarak)

1-) Applications of Magnetron Sputtered Thin Film Advanced Materials: Superconductor and Semiconductor Electronic Devices; Metal/Polymer Surface Coating - 2002

(H-1) Yurtdışı patent

1-) Patent Sahibi: F. Fenske, P. Dogan, S. Gall, B. Rech. “Influence of nitrogen for the improvement of thin-film solar cells”. 2009

(I-8) Alanı ile ilgili olarak; ulusal panel, konferans, seminer, kurs, açık oturum ve söyleşi gibi etkinliklerde davetli konuşmacı ya da panelist olarak görev almak.

1-) İzmir Yoğun Madde Fiziği Toplantısı (YMF 2014). Nisan. Türkiye. 2014

Verdiği Dersler

EEM 2006 2018-2019 Bahar

Electronics II

EEM 4002 2018-2019 Bahar

Graduation Project

EEM 4506 2018-2019 Bahar

Optoelectronics

EEM5518 2018-2019 Bahar

Solar Cell Device Physics

EEM5522 2018-2019 Bahar

Advanced Optoelectronics

EEM 2003 2018-2019 Güz

Electronics I

EEM 4003 2018-2019 Güz

Engineering Design

EEM 4513 2018-2019 Güz

Photovoltaic Energy Conversion

EEM5517 2018-2019 Güz

Semiconductor Device Physics